Boltzmann kinetic equation with correction term for intracollisional field
effect
K. Kalna
Abstract:
We have included a higher order term in the approximation of electron density
matrix on the way to the derivation of the Boltzmann kinetic equation from the
Liouville-von Neumann equation by means of Kubo's formalism. This higher term
has been added to the Boltzmann kinetic equation as the correction term. In a
simplified case the field effect collision rate is introduced representing
intracollisional field effect. The correction term gives a significant
contribution to the Boltzmann kinetic equation for the electric field strength
of 2.5 MV/m which was determined by the numerical calculation.
Source:
Semicond. Sci. Technol. 7 (1992) 1446-1452.
Electron-electron scattering induced capture in GaAs quantum wells
K. Kalna, M. Mosko, and F. M. Peeters
Abstract:
Electron capture times in a separate confinement quantum well (QW) with finite
electron density are calculated for electron-electron (e-e) and electron-polar
optic phonon (e-pop) scattering. In both cases the capture time versus QW width
oscillates with the same period, but with the quite different amplitude. For
electron density of 1011 cm-2 the e-e capture time is
101-103 times larger than the e-pop capture time
except for QW widths near resonance minima. Near the resonances it is only
2-3 times larger and at high enough electron densities even smaller than
the e-pop capture time. Thus the capture efficiency of a quantum well with
optimized (resonant) well width can be further optimized by varying the carrier
density.
Source:
Lithuanian J. Phys. 35 (1995) 435-439.
Electron capture in GaAs quantum wells via electron-electron and optic
phonon scattering
K. Kalna, M. Mosko, and F. M. Peeters
Abstract:
Electron capture times in a quantum well (QW) structure with finite electron
density are calculated for electron-electron (e-e) and electron-polar optic
phonon (e-pop) scattering. We find that the capture time oscillates as function
of the QW width for both processes with the same period, but with very different
amplitudes. For an electron density of 1011 cm-2
the e-e capture time is 101-103 times larger than
the e-pop capture time except for QW widths near the resonance minima, where it
is only 2-3 times larger. With increasing density the e-e capture time
decreases and near the resonance becomes smaller than the e-pop capture time.
Our e-e capture times are three orders larger than results of Blom et al.
[Appl. Phys. Lett. 62, 1490 (1993)]. The role of the e-e capture in QW
lasers is readdressed.
Source:
Appl. Phys. Lett. 68 (1996) 117-119.
Carrier capture due to carrier-carrier interaction in quantum wells
K. Kalna and M. Mosko
Abstract:
Electron capture times in a separate confinement quantum well (QW) with finite
electron density are calculated for electron-electron (e-e) and electron-polar
optic phonon (e-pop) scattering. In both cases the capture time versus QW width
oscillates with the same period, but with the quite different amplitude. For
electron density of 1011 cm-2 the e-e capture time
is 101-103 times larger than the e-pop capture time
except for QW widths near resonance minima. Near the resonances it is only
2-3 times larger and at high enough electron densities even smaller. Thus
the resonant capture can be optimized by varying the carrier density.
Source:
in: Heterostructure Epitaxy and Devices, Ed. by J. Novak and A.
Schlachetzki, NATO ASI Series, Kluwer Academic Publishers, Dordrecht (1996)
79-82.
Electron capture into quantum wells via scattering by electrons, holes,
and optical phonons
K. Kalna and M. Mosko
Abstract:
Electron capture times due to the electron-electron (e-e), electron-hole (e-h)
and electron-polar optical phonon (e-pop) interactions are calculated in the
GaAs quantum well (QW) with electron and hole densities
1011 cm-2. The calculated capture times oscillate
as a function of the QW width with the same period but with different
amplitudes. The e-h capture time is two to four orders larger and the e-e
capture time one to three orders larger than the e-pop capture time. The
exceptions are the QW widths near resonance minima, where the e-e capture time
is only 2-3 times larger and the e-h capture time 10-100 times larger. Different
physical origin of the oscillatory behavior is demonstrated for the e-e and
e-pop capture times. Effects of exchange and degeneracy on the e-e capture are
analysed. The exchange effect increases the e-e capture time approximately two
times while the degeneracy does not change the capture time except for the QW
depths and widths near the resonance.
Source:
Phys. Rev. B 54 (1996) 17730-17737.
Phonon confinement and electron capture time in quantum well
K. Kalna
Abstract:
The electron capture time via an electron-polar optical phonon interaction is
calculated considering the confinement of a phonon in a GaAs quantum well (QW)
laser structure. The effect of the phonon confinement decreases the electron
capture time about two times comparing to the electron capture time obtained
from the interaction of an electron with the bulk phonon.
Source:
Acta Phys. Pol. A 92 (1997) 805-808
Carrier capture into a GaAs quantum well with a separate confinement
region: Comment on quantum and classical aspects
M. Mosko and K. Kalna
Abstract:
We study the optic-phonon-mediated carrier capture in a narrow GaAs
quantum well with a 100-nm separate confinement region. In a standard
quantum model the capture means the carrier scattering from the energy
subband above the quantum well into a subband in the quantum well. We
use the quantum model in parallel with a classical model in which a
classical carrier is captured during collisionless motion when
emitting the optic phonon inside the GaAs layer. Comparison with the
experiment of Blom et al. [Phys. Rev. B 47, 2072,
(1993)] suggests that the quantum capture model is valid not
only for electrons but also for heavy holes in case of very narrow
(2.6-nm) quantum wells. In case of wider quantum wells the available
experimental data support equally the quantum as well as classical
hole capture models and do not allow to draw a definite conclusion.
Finally, the effect of the phonon confinement on the quantum capture
is evaluated and discussed.
Source:
Semicond. Sci. Technol. 14 (1999) 790-796.
Copyright © kalna@elec.gla.ac.uk