1. T. Krishnamohan and K. C. Saraswat, High Mobility Ge and III-V Materials and Novel Device Structures for High Performance Nanoscale MOSFETS, Proc. ESSDERC 2008, pp. 38-46, 15-18 Sep. 2009 (Edinburgh, UK).

  2. T. Krishnamohan, Band-engineering of Novel Channel Materials for High Performance Nanoscale MOSFETs, Proc. SISPAD 2008, pp. 97-100, 9-11 Sept. 2008 (Hakone, Japan).

  3. D. H. Kim, T. Krishnamohan and K. C. Saraswat, Performance Evaluation of Uniaxial- and Biaxial-Strained InxGa1-xAs NMOS DGFETs,Proc. SISPAD 2008, pp. 101-104, 9-11 Sept. 2008 (Hakone, Japan).

  4. S. Takagi, T. Iisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, and N. Sugiyama, Carrier-transport-enhanced channel CMOS for improved power consumption and performance, IEEE Trans. Electron Devices 55 (2008) 21-39.
Copyright © karolkalna