Karol KALNA: List of publications

    Journal Papers:

    		2025
  1. M. G. K. Alabdullah, N. Seoane, A. J. García-Loureiro, K. Kalna, Impact of Scaling and Interface Roughness on Drain Current in Nanosheet and Nanowire FETs: A 3D Monte Carlo Analysis, Rom. J. Inf. Sci. Technol. (ROMJIST), 28, No. 2, pp. 185-196 (2025).

  2. A. Islam, S. Cai, M. Alabdullah, and K. Kalna, Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium, ECS J. Solid State Sci. Technol., 14, No. 7, 073007 (2025).
    		2024
  3. Selma Rabhi, K. Sekar, K. Kalna, T. Hidouri, D P. Samajdar, B. K. Ravidasf, H. Bencherif, R. Fornari, K. Albaidani, and M. K. Hossain, Enhancing Perovskite Solar Cell Performance Through PbI2 in situ Passivation Using a One-Step Process: Experimental Insights and Simulations, RCS Adv. 14, 34051-34065 (2024).

  4. Selma Rabhi, K. Sekar, K. Kalna, Y. I. Bouderbala, N. Bouri, N. Oueldna, N. Belbachir, K. Dadda, M. S. Aida, and N. Attaf, Experimental Findings and SCAPS-1D Simulations for High-Efficiency MAPbI3 Perovskite Solar Cells Beyond 31%, Opt. Quantum Electron. 56, art. no. 1372 (23pp) (2024).

  5. M. G. K. Alabdullah, M. A. Elmessary, D. Nagy, Natalia Seoane, A. J. García-Loureiro, and K. Kalna, Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes, IEEE J. Electron Devices Soc. 12, 479-485 (2024).
    		2023
  6. J. M. Iglesias, Alejandra Nardone, R. Rengel, K. Kalna, María J Martín, and Elena Pascual, Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening, 2D Materials 10, No. 2, 025011 (8pp) (2023).
    		2022
  7. Selma Rabhi, N. Oueldna, Carine Perrin-Pellegrino, A. Portavoce, K. Kalna, M. Cherif Benoudia, and K. Hoummada, Thickness Effect on the Solid-State Reaction of Ni/GaAs System, nanomaterials 12, 2633 (11pp) (2022).

  8. Natalia Seoane, K. Kalna, X. Cartoixá, and A. J. García-Loureiro, Multi-level 3D device simulation approach applied to deeply scaled nanowire field effect transistors, IEEE Trans. Electron Devices 69, No. 9, 5276-5282, Sept. (2022).

  9. B. Thorpe, Sophie Schirmer, and K. Kalna, Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects, Semicond. Sci. Technol. 37, art. 075009 (11pp) (2022).
    		2021
  10. Natalia Seoane, J. G. Fernandez, K. Kalna, E. Comesaña, and A. J. García-Loureiro, Simulations of Statistical Variability in n-type FinFET, Nanowire and Nanosheet FETs, IEEE Electron Device Lett. 42, No. 10, 1416-1419, Oct. (2021).
    		2020
  11. K. Ahmeda, B. Ubochi, M. H. Alqaysi, A. Al-Khalidi, E. Wasige, and K. Kalna, The Role of SiN/GaN Cap Interface Charge and GaN Cap Layer to Achieve Enhancement Mode GaN MIS-HEMT Operation, Microelectron. Reliab. 115, art. 113965, Dec. (2020).

  12. S. Forster, D. Chaussende, and K. Kalna, SiC/Al4SiC4-Based Heterostructure Transistors, ACS Appl. Electron. Mater. 2, No. 9, 3001-3007, Aug. (2020).

  13. A. H. Mohamed, N. A. B. Ghazali, H. M. H. Chong, R. J. Cobley, L. Li, and K. Kalna, Channel mobility and contact resistance in scaled ZnO thin-film transistors, Solid-St. Electron. 172, 107867, Oct. (2020).

  14. A. Islam, A. T. Aynul, and K. Kalna, Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations, J. Phys.: Conf. Ser. 193, 012007 (8 pp) (2020).

  15. S. J. Duffy, B. Benbakhti, W. Zhang, K. Ahmeda, K. Kalna, M. Boucherta, M. Mattalah, H. O. Chahdi, N. E. Bourzgui, and A. Soltani, A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs, IEEE Trans. Electron Devices 67, No. 5, 1924-1930, May (2020).

  16. D. Nagy, G. Espiñeira, G. Indalecio, A. J. García-Loureiro, K. Kalna, and Natalia Seoane, Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes, IEEE Access 8, 53196-53202, March (2020).
    		2019
  17. Natalia Seoane, D. Nagy, G. Indalecio, G. Espiñeira, K. Kalna, and A. J. García-Loureiro, A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs, Materials 12, No. 15, art. 2391 (2019) [Special Issue: Nanowire Field-Effect Transistor (FET)].

  18. A. Islam and K. Kalna, Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects, IOP Conf. Ser.: Mater. Sci. Eng. 504, 012021 (7 pp) (2019).

  19. M. H. Alqaysi, A. Martinez, K. Ahmeda, B. Ubochi, and K. Kalna, Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET, IET Power Electronics 12, No. 11, 2731-2740, September (2019).

  20. O. Adenekan, P. Holland, and K. Kalna, Scaling and optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-50 V applications, Microelectron. Reliab. 99, 213-221, August (2019).

  21. G. Espiñeira, D. Nagy, G. Indalecio, A. J. García-Loureiro, K. Kalna, and Natalia Seoane, Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET, IEEE Electron Device Lett. 40, No. 4, 510-513, March (2019).

  22. D. Nagy, G. Indalecio, A. J. García-Loureiro, G. Espiñeira, M. A. Elmessary, K. Kalna, and Natalia Seoane, Drift-Diffusion Versus Monte Carlo Simulated On-Current Variability in Nanowire FETs, IEEE Access 7, 12790-12797, January (2019).

  23. S. Forster, D. Chaussende, and K. Kalna, Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4, ACS Appl. Energy Mater. 2, No. 1, 715-720 (2019).
    		2018
  24. O. Adenekan, P. Holland, and K. Kalna, Optimisation of Lateral Super-Junction Multi-Gate MOSFET for High Drive Current and Low Specific On-Resistance in Sub-100 V Applications, Microelectron. J. 81, 94-100, November (2018).

  25. S. J. Duffy, B. Benbakhti, K. Kalna, M. Boucherta, W. Zhang, N. E. Bourzgui, H. Maher, and A. Soltani, Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs, IEEE Access 6, 42721-42728, July (2018).

  26. G. Indalecio, A. J. García-Loureiro, M. A. Elmessary, K. Kalna, and Natalia Seoane, Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations, IEEE J. Electron Devices Soc. 6, 601-610 (2018).

  27. D. Nagy, M. Aldegunde, M. A. Elmessary, A. J. García-Loureiro, Natalia Seoane, and K. Kalna, Modelling of Nanoscale Multi-Gate Transistors Affected by Atomistic Interface Roughness, Special Issue J. Phys.: Conden. Matt. 30, No. 14, 144006, April (2018).

  28. D. Nagy, G. Indalecio, A. J. García-Loureiro, M. A. Elmessary, K. Kalna, and Natalia Seoane, FinFET versus Gate-All-Around Nanowire FET: Performance, Scaling and Variability, IEEE J. Electron Devices Soc. 6, 332-340 (2018).

  29. A. H. Mohamed, R. Oxland, M. Aldegunde, S. P. Hepplestone, P. V. Sushko, and K. Kalna, Narrowing of Band Gap at Source/Drain Contact Scheme of Nanoscale InAs-nMOS, Solid-State Electron. 142, 31-35, April (2018).

  30. N. Seoane, G. Indalecio, D. Nagy, K. Kalna, and A. J. García-Loureiro, Impact of Cross-Section Shape on 10 nm Gate Length InGaAs FinFET Performance and Variability, IEEE Trans. Electron Devices 65, No. 2, 456-462, February (2018).
    		2017
  31. B. Thorpe, K. Kalna, F. C. Langbein, and S. Schirmer, Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor, J. Appl. Phys. 122, No. 22, 223903 (17pp), (2017).

  32. D. Nagy, G. Indalecio, A. J. García-Loureiro, M. A. Elmessary, K. Kalna, and Natalia Seoane, Metal Grain Granularity Study on a Gate-All-Around Nanowire FET, IEEE Trans. Electron Devices 64, No. 12, 5263-5269, Dec. (2017).

  33. K. Ahmeda, B. Ubochi, B. Benbakhti, S. J. Duffy, A. Soltani, W. Zhang, and K. Kalna, Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures, IEEE Access 5, 20946-20952, Oct. (2017).

  34. S. J. Duffy, B. Benbakhti, M. Mattalah, W. Zhang, M. Bouchilaoun, M. Boucherta, K. Kalna, N. Bourzgui, H. Maher, and A. Soltani, Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate, ECS J. Solid State Sci. Technol. 6, No. 11, S3040-S3043 (2017).

  35. B. Ubochi, K. Ahmeda, and K. Kalna, Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs, ECS J. Solid State Sci. Technol. 6, No. 11, S3005-S3009 (2017).

  36. B. Ubochi, S. Faramehr, K. Ahmeda, P. Igić, and K. Kalna, Operational Frequency Degradation Induced Trapping in Scaled GaN HEMTs, Microelectron. Reliab. 71, 35-40, April (2017).

  37. G. Indalecio, N. Seoane, K. Kalna and A. J. García-Loureiro, Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects, IEEE Trans. Electron Devices 64, No. 4, 1695-1701, April (2017).

  38. M. A. Elmessary, D. Nagy, M. Aldegunde, Natalia Seoane, G. Indalecio, J. Lindberg, W. Dettmer, D. Perić, A. J. García-Loureiro, and K. Kalna, Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations, Solid-State Electron. 128, 17-24, Feb. (2017).
    		2016
  39. Olga Kryvchenkova, I. Abdullah, J. Macdonald, M. Elliott, T. Anthopoulos, Y.-H. Lin, P. Igić, K. Kalna, and R. J. Cobley, A non-destructive method for mapping metal contact diffusion in In2O3 thin-film transistors, ACS Appl. Mater. & Interfaces 8, No. 38, 25631-25636 (2016).

  40. B. Benbakhti, K. H. Chan, A. Soltani, and K. Kalna, Device and Circuit Performance of the Future Hybrid III-V and Ge based CMOS Technology, IEEE Trans. Electron Devices 63, No. 10, 3893-3899, Oct. (2016).

  41. Natalia Seoane, M. Aldegunde, D. Nagy, M. A. Elmessary, G. Indalecio, A. J. García-Loureiro, and K. Kalna, Simulation Study of Scaled In0.53Ga0.47As and Si FinFETs for Sub-16 nm Technology Nodes, Semicond. Sci. Technol. 31, No. 7, 075005 (6pp), (2016).

  42. G. Indalecio, A. J. García-Loureiro, N. Seoane, and K. Kalna, Study of Metal-Gate Work-Function Variation using Voronoi cells: Comparison of Rayleigh and Gamma distributions, IEEE Trans. Electron Devices 63, No. 6, 2625-2628, June (2016).

  43. M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Perić, A. J. García-Loureiro, and K. Kalna, Anisotropic Quantum Corrections for 3D Finite Element Monte Carlo Simulations of Nanoscale Multigate Transistors, IEEE Trans. Electron Devices 63, No. 3, 933-939, March (2016) [Open Access].

  44. Natalia Seoane, G. Indalecio, M. Aldegunde, D. Nagy, M. A. Elmessary, A. J. García-Loureiro, and K. Kalna, Comparison of Fin Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs, IEEE Trans. Electron Devices 63, No. 3, 1209-1216, March (2016).
    		2015
  45. A. M. Lord, T. G. Maffeis, Olga Kryvchenkova, R. J. Cobley, K. Kalna, Despoina M. Kepaptsoglou, Q. M. Ramasse, A. S. Walton, M. B. Ward, J. Köble, and S. P. Wilks, Controlling the electrical transport properties of nanocontacts to nanowires, Nano Letters 15, No. 7, 4248-4254, July (2015) [Open Access].

  46. G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, and A. J. García-Loureiro, Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold, J. Low Power Electron. 11, No. 2, 256-262, June (2015).

  47. Olga Kryvchenkova, R. J. Cobley, and K. Kalna, The Current Crowding Effect in ZnO Nanowires with a Metal Contact, Mater. Today: Proceedings 2, No. 1, 309-214 (2015).

  48. C. J. Barnett, Olga Kryvchenkova, L. S. J. Wilson, T. G. G. Maffeis, K. Kalna, and R. J. Cobley, The role of probe oxide in local surface conductivity measurements, J. Appl. Phys. 117, No. 17, 174306 (7pp), May (2015).

  49. M. Aldegunde and K. Kalna, Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes, Comput. Phys. Commun. 189, 31-36, Apr. (2015).

  50. D. Nagy, M. A. Elmessary, M. Aldegunde, R. Valin, A. Martinez, J. Lindberg, W. G. Dettmer, D. Perić A. J. García-Loureiro, and K. Kalna, 3D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET with Different Cross-Sections, IEEE Trans. Nanotechnol. 14, No. 1, 93-100, Jan. (2015) [Open Access].

  51. M. Aldegunde, S. Hepplestone, P. V. Sushko, and K. Kalna, Multi‐scale simulations of metal‐semiconductor nanoscale contacts, J Phys.: Conf. Ser. 647, 012030 (4 pp), (2015).
    		2014
  52. S. Faramehr, K. Kalna, and P. Igić, Design and simulation of a novel 1400V–4000V enhancement mode buried gate GaN HEMT for power applications, Semicond. Sci. Technol. 29, No. 11, 115020 (7pp), Nov. (2014).

  53. M. Aldegunde, S. Hepplestone, P. Sushko, and K. Kalna, Multi-scale simulations of a Mo/n+-GaAs Schottky contact for nano-scale III-V MOSFETs, invited for Semicond. Sci. Technol. 29, No. 5, 054003 (7pp), May (2014).

  54. G. Indalecio, M. Aldegunde, N. Seoane, K. Kalna, and A. J. García-Loureiro, Statistical study of the influence of LER and MGG in SOI MOSFET, Semicond. Sci. Technol. 29, No. 4, 045005 (7pp), Apr. (2014).

  55. O. Kryvchenkova, R. J. Cobley, and K. Kalna, Self-consistent modelling of tunnelling spectroscopy on III-V semiconductors, Appl. Surf. Sci. 295, 173–179, March (2014).

  56. S. Faramehr, K. Kalna, and P. Igić, Drift-diffusion and hydrodynamic modelling of current collapse in GaN HEMTs for RF power application, Semicond. Sci. Technol. 29, No. 2, 025007 (11pp), Feb. (2014).

  57. N. Seoane, G. Indalecio, E. Comesaña, M. Aldegunde, A. J. García-Loureiro and K. Kalna, Random dopant, line-edge roughness and gate workfunction variability in a Nano InGaAs FinFET, IEEE Trans. Electron Devices 61, No. 2, 466-472, Feb. (2014).

  58. J. Lindberg, M. Aldegunde, D. Nagy, W. G. Dettmer, K. Kalna, A. J. García-Loureiro, and D. Perić, Quantum corrections based on the 2-D Schrödinger equation for 3-D Finite Element Monte Carlo simulations of nanoscaled FinFETs, IEEE Trans. Electron Devices 61, No. 2, 423-429, Feb. (2014).
    		2013
  59. M. Aldegunde, A. J. García-Loureiro, and K. Kalna, 3D finite element Monte Carlo simulations of multi-gate nanoscale transistors, IEEE Trans. Electron Devices 60, No. 5, 1561-1567, May (2013).

  60. N. Seoane, G. Indalecio, E. Comesaña, A. J. García-Loureiro, M. Aldegunde, and K. Kalna, 3D simulations of random dopant and metal gate workfunction variability in an In0.53Ga0.47As GAA MOSFET, IEEE Electron Device Lett. 34, No. 2, 205-207, Feb. (2013).
    		2012
  61. B. Benbakhti, A. Martinez, K. Kalna, G. Hellings, G. Eneman, K. De Meyer, and M. Meuris, Simulation study of performance for a 20 nm gate length In0.53Ga0.47As Implant Free Quantum Well MOSFET, IEEE Trans. Nanotechnol. 11, No. 4, 808-817, July (2012). [Cited in]

  62. A. Islam and K. Kalna, Corrigendum: Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi-Dirac statistics, Semicond. Sci. Technol. 27, No. 3, 039501 (1pp) (2012).

  63. N. Seoane, M. Aldegunde, A. J. García-Loureiro, R. Valin, and K. Kalna, 3D `atomistic' simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs", Solid-State Electron. 69, 43-49, March (2012).
    		2011
  64. A. Islam, B. Benbakhti, and K. Kalna, Monte Carlo study of ultimate channel scaling in Si and In0.3Ga0.7As bulk MOSFETs, IEEE Trans. Nanotechnol. 10, No. 6, 1424-1432, Nov. (2011).

  65. B. Benbakhti, KH. Chan, E. Towie, K. Kalna, C. Riddet, X. Wang, G. Eneman, G. Hellings, K. De Meyer, M. Meuris, and A. Asenov, Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach, Solid-State Electron. 63, No. 1, 14-18 (2011). [Cited in]

  66. A. J. García-Loureiro, N. Seoane, M. Aldegunde, R. Valin, A. Asenov, A. Martinez, and K. Kalna, Implementation of the density gradient quantum corrections for 3D simulations of multigate nanoscaled transistors, IEEE Trans. Comput-Aided Des. Integr. Circuits Syst. 30, No. 6, 841-851, June (2011).

  67. A. Islam and K. Kalna, Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi-Dirac statistics, Semicond. Sci. Technol. 26, No. 5, 055007 (9pp) (2011).

  68. B. Benbakhti, K. Kalna, KH. Chan, E. Towie, G. Hellings, G. Eneman, K. De Meyer, M. Meuris, and A. Asenov, Design and analysis of a new In0.53Ga0.47As implant-free quantum-well device structure, Microelectron. Eng. 88, No. 4, 358-361 (2011).
    		2010
  69. A. Islam, B. Benbakhti, and K. Kalna, Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length, J Phys.: Conf. Ser. 242, No. 1, 012011 (4 pp) (2010).

  70. B. Benbakhti, J. S. Ayubi-Moak, K. Kalna, D. Lin, G. Hellings, G. Brammertz, K. De Meyer, I. Thayne, and A. Asenov, Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures, Microelectron. Reliab. 50, 360-364, (2010). [Cited in]

  71. M. Aldegunde, Natalia Seoane, A.J. García-Loureiro, and K. Kalna, Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes, Comput. Phys. Commun. 181, 24-34, Jan. (2010).
    		2009
  72. B. Benbakhti, J. S. Ayubi-Moak, K. Kalna, and A. Asenov, Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7As MOSFETs, J. Phys.: Conf. Ser. 193, 012122 (4 pp) (2009).

  73. Z. Soban, J. Voves, and K. Kalna, The characterization of the hole transport in Sb based strained quantum wells, J. Phys.: Conf. Ser. 193, 012128 (4 pp) (2009).

  74. B. Benbakhti, A. Soltani, K. Kalna, M. Rousseau, and J.-C. De Jaeger, Effects of self-heating on performance degradation in AlGaN/GaN-Based Devices, IEEE Trans. Electron Devices 56, No. 10, 2178-2185, Oct. (2009). [Cited in]

  75. J. S. Ayubi-Moak, K. Kalna, and A. Asenov, Monte Carlo simulations of In0.75Ga0.25As MOSFETs at 0.5 V supply voltage for high-performance CMOS, Int. J. High Speed Electron. Systems 19, No. 1, 93-100 (2009).

  76. D. Balaz, K. Kalna, M. Kuball, M. J. Uren, and A. Asenov, Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study, Phys. Status Solidi (c) 6, No. S2, S1007-S1011 (2009).

  77. N. Seoane, A. J. García-Loureiro, M. Aldegunde, K. Kalna, and A. Asenov, Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs, Semicond. Sci. Technol. 24, No. 5, 055011 (2009).

  78. J. S. Ayubi-Moak, B. Benbakhti, K. Kalna, G. W. Paterson, R. Hill, M. Passlack, I. Thayne, and A. Asenov, Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs, Microelectron. Eng. 86, No. 7-9, 1564-1567, July-Sept. (2009).

  79. A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker, and A. Asenov, Impact of body-thickness-dependent bandstructure on scaling of Double Gate MOSFETs: a DFT/NEGF study, IEEE Trans. Nanotechnol. 8, No. 2, 159-166, March (2009). [Cited in]
    		2008
  80. I. G. Thayne, R. J. W. Hill, D. A. J. Moran, K. Kalna, A. Asenov, and M. Passlack, Comments on “High performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm”, IEEE Electron Device Lett. 29, No. 10, 1085-1086, Oct. (2008). [Cited in]

  81. K. Kalna, Natalia Seoane, A. J. García-Loureiro, I. G. Thayne, and A. Asenov, Benchmarking of scaled InGaAs implant-free nanoMOSFETs, IEEE Trans. Electron Devices 55, No. 9, 2297-2306, Sept. (2008).

  82. M. Aldegunde, Natalia Seoane, A. J. García-Loureiro, P. V. Sushko, A. L. Shluger, J. L. Gavartin, K. Kalna, and A. Asenov, Atomistic mesh generation for the simulation of nanoscale metal oxide-semiconductor field effect transistors, Phys. Rev. E 77 056702 (2008) [selected for Virtual Journal of Nanoscale Science & Technology (19 May, 2008 issue)].

  83. M. Aldegunde, A. J. García-Loureiro, A. Martinez, and K. Kalna, Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs, J. Comput. Electron. 7, No. 3, 201-204 Sept. (2008).

  84. Natalia Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET, J. Comput. Electron. 7, No. 3, 159-163, Sept. (2008). [Cited in]

  85. K. Kalna, A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov, NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs, J. Comput. Electron. 7, No. 3, 288-292, Sept. (2008). [Cited in]

  86. A. Martinez, K. Kalna, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov, Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach, Phys. Status Solidi (c) 5, No. 1, 47-51 (2008).
    		2007
  87. K. Kalna, R. Droopad, M. Passlack, and A. Asenov, Monte Carlo simulations of InGaAs nano-MOSFETs, Microelectron. Eng. 84, 2150-2153 (2007). [Cited in]

  88. A. Asenov, K. Kalna, I. Thayne, and R. J. W. Hill, Simulation of implant free III-V MOSFETs for high performance low power nano-CMOS applications, Microelectron. Eng. 84, 2398-2403 (2007). [Cited in]

  89. K. Kalna, J. A. Wilson, D. A. J. Moran, R. J. W. Hill, A. R. Long, R. Droopad, M. Passlack, I. G. Thayne, and A. Asenov, Monte Carlo simulations of high performance implant free In0.3Ga0.7As nano-MOSFETs for low-power CMOS applications, IEEE Trans. Nanotechnol. 6, No. 1, 106-112, Jan. (2007). [Cited in]

  90. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator, Solid-State Electron. 51, 481-488 (2007).

  91. A. Martinez, K. Kalna, J. R. Barker, and A. Asenov, A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach, Phys. E: Low-dimensional Systems and Nanostructures 37, 168-172 (2007).
    		2006
  92. K. Kalna, A. Asenov, and M. Passlack, Monte Carlo Simulation of Implant Free InGaAs MOSFET, J. Phys.: Conf. Ser. 38, 200-203 (2006). [ Full paper in PDF 187 kB]

  93. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Current variations in pHEMTs introduced by channel composition fluctuations, J. Phys.: Conf. Series 38, 212-215 (2006). [ Full paper in PDF 365 kB]

  94. M. Aldegunde, A. J. García-Loureiro, K. Kalna, and A. Asenov, Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator, J. Comput. Electron. 5, 311-314 (2006).

  95. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator, J. Comput. Electron. 5, 385-388 (2006).

  96. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Atomistic effect of delta doping layer in a 50 nm InP HEMT, J. Comput. Electron. 5, 131-135 (2006). [ Full paper in PDF 666 kB]

  97. K. Kalna, Q. Wang, M. Passlack, and A. Asenov, MC simulations of δ-doping placement in sub-100 nm implant free InGaAs MOSFETs, Mater. Sci. Eng. B 135, 285-288 (2006).
    		2005
  98. A. J. García-Loureiro, K. Kalna, and A. Asenov, Efficient three-dimensional parallel simulations of PHEMTs, Int. J. Numer. Model.-Electron. Netw. Device Fields 18, No. 5, 327-340, Sept./Oct. (2005). [ Full paper in PDF 2.9 MB]
    		2004
  99. K. Kalna, M. Boriçi, L. Yang, and A. Asenov, Monte Carlo simulations of III-V MOSFETs, Semicond. Sci. Technol. 19, S202-S205 (2004). [ Full paper in PDF 191 kB] [Cited in]

  100. K. Kalna and A. Asenov, Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions, Solid-State Electron. 48, 1223-1232 (2004) . [ Full paper in PDF 484 kB] [Cited in]
    		2003
  101. K. Kalna and A. Asenov, Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study, Math. Comput. Simul. 62 (2003) 357-366. [Full paper in PDF 161 kB] [Cited in]

  102. K. Kalna and A. Asenov, Gate tunnelling and impact ionisation in sub 100 nm PHEMTs, IEICE Trans. Electron E86-C, 330-335 (2003).

  103. K. Kalna, L. Yang, and A. Asenov, Simulation study of high performance III-V MOSFETs for digital applications, J. Comput. Electron. 2, 341-345 (2003).

  104. A. J. García-Loureiro, K. Kalna, and A. Asenov, 3D Parallel simulations of fluctuation effects in pHEMTs, J. Comput. Electron. 2, 369-373 (2003).
    		2002
  105. K. Kalna, S. Roy, A. Asenov, K. Elgaid, and I. Thayne, Scaling of pseudomorphic high electron mobility transistors to decanano dimensions, Solid-State Electron. 46 (2002) 631-638. [ Full paper in PDF 366 kB] [Cited in]

  106. K. Kalna and A. Asenov, Quantum corrections in the Monte Carlo simulations of scaled PHEMTs with multiple delta doping, J. Comput. Electron. 1 (2002) 257-261.

  107. K. Kalna and A. Asenov, Nonequilibrium transport in scaled high electron mobility transistors, Semicond. Sci. Technol. 17 (2002) 579-584 [ Full paper in PDF 160 kB] [Awarded by the IOP Select].
    		2001
  108. K. Kalna, C. Y. L. Cheung, and K. A. Shore, Electron transport process in quantum cascade intersubband semiconductor lasers, J. Appl. Phys. 89, No. 4, Feb. (2001) 2001-2005. [ Full paper in PDF 124 kB] [Cited in]

  109. K. Kalna, A. Asenov, K. Elgaid, and I. Thayne, Scaling of pHEMTs to decanano dimensions, VLSI design 13, No. 1-4 (2001) 435-439. [Cited in]
    		2000
  110. K. Kalna, C. Y. L. Cheung, I. Pierce, and K. A. Shore, Self-consistent analysis of carrier transport and carrier capture dynamics in quantum cascade intersubband semiconductor lasers, IEEE Trans. Microwave Theory Tech. 48 (2000) 639-644. [ Full paper in PDF 187 kB] [Cited in]
    		1999
  111. M. Moško and K. Kalna, Carrier capture into a GaAs quantum well with a separate confinement region: Comment on quantum and classical aspects, Semicond. Sci. Technol. 14 (1999) 790-796. [Abstract] ( Full paper in PDF 211 kB) [Cited in]
    		1997
  112. K. Kalna, Phonon confinement and electron capture time in quantum well, Acta Phys. Pol. A 92 (1997) 805-808. [Abstract]
    		1996
  113. K. Kalna and M. Moško, Electron capture in quantum wells via scattering by electrons, holes, and optical phonons, Phys. Rev. B 54 (1996) 17730-17737. [Abstract] [ Full paper in PDF 203 kB] [Cited in]

  114. K. Kalna, M. Moško, and F. M. Peeters, Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering, Appl. Phys. Lett. 68 (1996) 117-119. [Abstract] [ Full paper in PDF 123 kB] [Cited in]
    		1992
  115. K. Kalna, Boltzmann kinetic equation with correction term for intracollisional field effect, Semicond. Sci. Technol. 7, No. 12, (1992) 1446-1452. [Abstract] [ Full paper in PDF 359 kB]

    Book:
    		2018
  116. Islam Aynul and Karol Kalna: Nano-Transistor Scaling and their Characteristics using Monte Carlo, (LAP LAMBERT Academic Publishing, 27 Nov. 2018) 60 pages, ISBN-10: 6139947472, ISBN-13: 978-613-9-94747-8.

    Book Chapters:

    		2013
  117. A. Martinez, M. Aldegunde, and K. Kalna, Impact of Phonon Scattering in a Si GAA Nanowire FET with a Single Donor in the Channel, in Nanoelectronic Device Applications Handbook (Devices, Circuits, and Systems), ed. by J. E. Morris and K. Iniewski, pp. 717-726 (CRC Press, New York, 2013).
    		2009
  118. I. G. Thayne, R. J. W. Hill, M. C. Holland, X. Li, H. Zhou, D. S. Macintyre, S. Thoms, K. Kalna, C. R. Stanley, A. Asenov, R. Droopad, and M. Passlack, Review of Current Status of III-V MOSFETs, in Graphene and Emerging Materials For Post-CMOS Applications, ed. by Y. Obeng, S. DeGendt, P. Srinivasan, D. Misra, H. Iwai, Z. Karim, D. W. Hess, H. Grebel, ECS Transactions 19 (5), pp. 275-286 (Electrochemical Society Inc., Pennington, 2009).
    		2008
  119. M. Aldegunde, A. J. García-Loureiro, Natalia Seoane, and K. Kalna, Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures (Chapter 2), in MOSFETs: Properties, Preparations and Performance, ed. by Noah T. Andre and Lucas M. Simon, pp. 61-84 (Nova Publishers Inc., Hauppauge, U.S.A., 2008), ISBN: 978-1-60456-762-5.
    		2006
  120. K. Kalna, L. Yang, and A. Asenov, Fermi-Dirac statistics in Monte Carlo simulations of InGaAs MOSFETs, in "Nonequilibrium Carrier Dynamics in Semiconductors", Springer Proceedings in Physics Series 110, pp. 281-285, Eds. M. Saraniti and U. Ravaioli (Springer-Verlag, Berlin Heidelberg, 2006).

    Talks (Presenting person is underlined):
    		2025
  121. M. G. K. Alabdullah, N. Seoane, A. J. García-Loureiro, K. Kalna, 3D Monte Carlo Simulations of n-type Nanowire-FETs: The Effect of Gate Scaling, 21st Int. Conf. Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuits Design (SMACD), (Istanbul, Turkiye, 7-10 July 2025), pp. 1-4.

  122. M. G. K. Alabdullah, Natalia Seoane, A. J. García-Loureiro, and K. Kalna, The Effect of Ultimate Gate Length Scaling on Drain Drive Current of Nanosheet FETs, Proc. UK Semiconductors 2025 (Sheffield, UK, 2-3 July 2025), p. 86.

  123. F. Hrubišák, M. Ťapajna, O. Pohorelec, F. Egyenes, E. Dobročka, Kristína Hušeková, K. Kálna, T. Izsák, J. Fedor, and F. Gucmann, The effect of hydrogen on electrical properties of depletion-mode MOSFETs fabricated from β-Ga2O3 on 4H-SiC substrates, in Proc. Ultra-Wide Bandgap Oxides (UWO 2025) (Glasgow, UK, 25 June 2025).

  124. F. Passeri, A. Martinez, R. Grassi, and K. Kalna, Implementation of quantum transmitting boundary method in a 1D electron transport code, Book of Abstracts: Int. Workshop on Computational Nanotechnology (IWCN 2025) (Salt Lake City, U.S.A., 21-23 May 2025), pp. 137-138.
    		2024
  125. B. Ubochi, K. Ahmeda, Maira Elksne, B. Benbakhti, A. Al-Khalidi, E. Wasige, and K. Kalna, Self-Heating and Hotspots in GaN HEMTs with Conventional and T-Shape Gates, Proc. EEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe 2024), Cardiff, United Kingdom, 16-18 September 2024, p. 25.

  126. M. G. K. Alabdullah, Natalia Seoane, A. J. García-Loureiro, and K. Kalna, Impact of Oxide Thickness & Doping Profile Variation on Nanosheet FET Performance, Proc. UK Semiconductors 2024 (Sheffield, UK, 8-9 July 2024), p. 92.
    		2023
  127. M. G. K. Alabdullah, B. B. Raj, Natalia Seoane, A. J. García-Loureiro, and K. Kalna, Architecture Variations for the 12 nm Gate Nanosheet Transistors using Monte Carlo Simulations, Proc. UK Semiconductors 2023 (Sheffield, UK, 12-13 July 2023), p. 83.

  128. J. M. Iglesias, K. Kalna, R. Rengel, and Elena Pascual, Upper Valley and Degeneracy Interplay on the Mobility of Transition Metal Dichalcogenides: Insights from Monte Carlo Simulation, Proc. Int. Workshop on Computational Nanotechnology (IWCN 2023) (Barcelona, Spain, 12-16 June 2023), pp. 70-71.
    		2022
  129. K. Mumba, S. Cai, and K. Kalna, 3D Process Flow Modelling and Characterisation of Stacked Gate-All-Around Nanosheet Transistors, 2022 IEEE 22nd Int. Conf. on Nanotechnology (IEEE NANO) (Palma De Malorca, Spain, 4-8 July 2022), pp. 271-274.

  130. K. Mumba, S. Cai, and K. Kalna, 3D Modelling of Process Flow of Stacked Gate-All-Around Nanosheet Transistors for the 3 nm Technology Node, Proc. UK Semiconductors 2022 (Sheffield, UK, 6-7 July 2022), p. 100.
    		2021
  131. J. G. Fernandez, Natalia Seoane, E. Comesaña, K. Kalna and A. García-Loureiro, Impact of metal grain granularity on three gate-all-around advanced architectures, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2021) (Dallas, U.S.A., 27-29 September 2021), pp. 201-205.
    		2019
  132. J. E. Evans, G. Burwell, F. C. Langbein, S. G. Shermer, and K. Kalna, Dilute magnetic contact for a spin GaN HEMTProc. Semiconductor and Integrated OptoElectronics Conf. (SIOE, Cardiff, UK, 16-18 April 2019).

  133. K. Kalna, D. Nagy, A. J. García-Loureiro and Natalia Seoane, 3D Schrödinger Equation Quantum Corrected Monte Carlo and Drift Diffusion Simulations of Stacked Nanosheet Gate-All-Around Transistors, Proc. International Workshop on Computational Nanotechnology (IWCN 2019) (Evanston, U.S.A., 20-24 June 2019), pp. 31-32.

  134. B. Thorpe, F. Langbein, Sophie Schirmer, and K. Kalna, Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors, Proc. Int. Workshop on Computational Nanotechnology (IWCN 2019) (Evanston, U.S.A., 20-24 June 2019), pp. 40-42.
    		2018
  135. S. J. Duffy, B. Benbakhti, W. Zhang, K. Kalna, K. Ahmeda, M. Boucherta, N. E. Bourzgui, H. Maher, and A. Soltani, A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs, Proc. 13th European Microwave Integrated Circuits Conference (EuMIC) (Madrid, Spain, 2018), pp. 214-217.

  136. O. A. Adenekan, P. Holland, and K. Kalna, Scaling and Optimisation of a 3‐D Lateral Super-Junction Multi-Gate Power MOSFET (SJ‐MGFET) for sub-100 V Applications, Proc. UK Semiconductors 2018 (Sheffield, UK, 4-5 July 2018), p. 79.

  137. B. Ubochi, K. Ahmeda, M. Alqaysi, and K. Kalna, High Transconductance Multiple Drain Access Channel AlGaN/GaN HEMTs, Proc. 42th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2018), Bucharest, Romania, 14-16 May 2018, pp. 16-17.
    		2017
  138. B. Ubochi, K. Ahmeda, and K. Kalna, Buffer trapping effects on knee walkout in GaN HEMTs, 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel.

  139. B. Ubochi, K. Ahmeda, and K. Kalna, Buffer Trapping and DC/RF Dispersion in GaN HEMTs, Proc. UK Semiconductors 2017 (Sheffield, UK, 12-13 July 2017), p. 147.

  140. K. Ahmeda, B. Ubochi, K. Kalna, B. Benbakhti, S. J. Duffy, W. Zhang, and A. Soltani, Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices, Proc. 47th European Microwave Week 2017 (12th European Microwave Integrated Circuits Conference, Nuremberg, Germany, 8-13 October 2017), pp. 37-40.

  141. M. A. Elmessary, D. Nagy, M. Aldegunde, A. J. García-Loureiro, and K. Kalna, Study of Strained Effects in Nanoscale GAA Nanowire FETs Using 3D Monte Carlo Simulations, Proc. ESSDERC 2017 (Leuven, Belgium, 11-14 September 2017), pp. 184-187.

  142. O. A. Adenekan, P. Holland, and K. Kalna, Optimisation of Breakdown Voltage of Lateral Superjunction Multi-Gate Power MOSFET for sub-200V Applications, Proc. UK Semiconductors 2017 (Sheffield, UK, 12-13 July 2017), p. 78.

  143. B. Ubochi, K. Ahmeda, and K. Kalna, Buffer Trapping and DC/RF Dispersion in GaN HEMTs, Proc. UK Semiconductors 2017 (Sheffield, UK, 12-13 July 2017), p. 147.

  144. K. Ahmeda, B. Ubochi, A. Al-Khalidi, E. Wasige, and K. Kalna, Impact of GaN Cap Thickness in 1 µm Gate Length GaN/AlGaN/AlN/GaN HEMT, Proc. UK Semiconductors 2017 (Sheffield, UK, 12-13 July 2017), p. 146.

  145. S. J. Duffy, J. C. Gerbedoen, M. Mattalah, B. Benbakhti, W. Zhang, M. Boucherta, K. Kalna, H. Maher, A. Soltani, Low Ohmic Contact Resistance for AlGaN/GaN HEMTs with high Al Concentration & Si-HP [111] Substrate, Proc. UK Semiconductors 2017 (Sheffield, UK, 12-13 July 2017), p. 149.

  146. Natalia Seoane-Iglesias, G. Indalecio, D. Nagy, M. Elmessary, K. Kalna and A. J. García-Loureiro, Metal grain work-function variability in GAA Si nanowire via a fluctuation sensitivity map, Proc. the International Workshop on Computational Nanotechnology (IWCN 2017) (Windermere, U.K., 6-9 June 2017), p. 74.

  147. M. A. Elmessary, D. Nagy, M. Aldegunde, A. J. García-Loureiro, and K. Kalna, 3D Monte Carlo simulatisns of strained Si GAA nanowire FETs with different channel orientations, Proc. Int. Workshop on Computational Nanotechnology (IWCN 2017) (Windermere, U.K., 6-9 June 2017), p. 83.

  148. Olga Kryvchenkova, K. Kalna, R. J. Cobley, and P. Igic, Thermo‐mechanical Related Contact Reliability in In2O3 Thin Film Transistors, Proc. 17th Intersociety Conf. on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm 2017) (Orlando, U.S.A., 30 May-2 June, 2017).
    		2016
  149. K. Kalna, Performance and variability of InGaAs and Si FinFETs in future digital applications, Proc. 11th Int. Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2016), ed. by J. Osvald and G. Vanko (Smolenice Castle, Slovakia, 13-16 November 2016). [Invited]

  150. B. C. Ubochi, S. Faramehr, K. Ahmeda, P. Igić, and K. Kalna, Lateral scaling and electric field induced traps degradation of operational frequency in 1 μm gate length GaN HEMT Proc. 11th International Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2016), ed. by J. Osvald and G. Vanko (Smolenice Castle, Slovakia, 13-16 November 2016), pp. 181-184.

  151. K. Ahmeda, S. Faramehr, P. Igić, K. Kalna, S. J. Duffy, A. Soltani, and B. Benbakhti, The role of self-heating and electrical stress in AlGaN/GaN based devices, Proc. 11th Int. Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2016), ed. by J. Osvald and G. Vanko (Smolenice Castle, Slovakia, 13-16 November 2016), pp. 203-206.

  152. K. Kalna, Multi-Gate Non-Planar III-V and Si Transistor Architectures for Sub-10nm Silicon Technology, Proc. BIT's 6th Annual World of Nano Science & Technology - 2016 (Singapore, 26-28 October 2016).

  153. K. Kalna, Scaling and Variability of Multi-Gate Non-Planar III-V and Si Transistors for Sub-10nm Silicon Technology, ARM Research Summit 2016, Cambridge 15-16 Sept. 2016.

  154. M. A. Elmessary, D. Nagy, M. Aldegunde, A. J. García-Loureiro, and K. Kalna, Strain Simulations of Triangular FinFET with Different Channel Orientations using 3D Quantum-Corrected MC Toolbox, Proc. UK Semiconductors 2016, p. 81 (Sheffield, UK, 6-7 July 2016).

  155. B. Ubochi, K. Ahmeda, S. Faramehr, P. Igić, and K. Kalna, Trapping Effects and Operational Frequency Degradation of GaN HEMTs, Proc. UK Semiconductors 2016, p. 179 (Sheffield, UK, 6-7 July 2016).

  156. M. A. Elmessary, D. Nagy, M. Aldegunde, Natalia Seoane, G. Indalecio, J. Lindberg, W. Detmer, D. Perić, A. J. García-Loureiro, and K. Kalna, Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations, Proc. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), pp. 32-33 (Institute for Microelectronics, TU Vienna, Austria, 25-27 January 2016).
    		2015
  157. M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, A. J. García-Loureiro, and K. Kalna, Multi-Subband Interface Roughness Scattering using 2D Finite Element Schrödinger Equation for Monte Carlo Simulations of Multi-Gate Transistors, Proc. the 18th International Workshop on Computational Electronics (IWCE-18), pp. 91-92 (Purdue, U.S.A., 2-4 September 2015).

  158. D. Nagy, M. A. Elmessary, M. Aldegunde, J. Lindberg, A. J. García-Loureiro, and K. Kalna, Multi-Subband Interface Roughness Scattering using 2D Finite Element Schrödinger Equation for Monte Carlo Simulations of Multi-Gate Transistors, Proc. the 18th International Workshop on Computational Electronics (IWCE-18), pp. 89-90 (Purdue, U.S.A., 2-4 September 2015).

  159. M. Aldegunde, S. Hepplestone, P. V. Sushko, and K. Kalna, Multi‐scale simulations of metal‐semiconductor nanoscale contacts, Proc. 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19), p. 82 (Salamanca, Spain, 29 June - 2 July 2015).

  160. M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Perić, A. J. García-Loureiro, and K. Kalna, Anisotropic Schrödinger Equation Quantum Corrections for 3D Finite Element Monte Carlo Simulations of Triangular SOI FinFET, Proc. UK Semiconductors 2015, p. 93 (Sheffield, UK, 1-2 July 2015).
    		2014
  161. Olga Kryvchenkova, K. Kalna, and R. J. Cobley, TModelling Heating Effects due to Current Crowding in ZnO Nanowires with End-Bonded Metal Contacts, Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2014), 267-270, ed. by J. Breza and D. Donoval (Smolenice Castle, Slovakia, 20-22 October 2014).

  162. S. Faramehr, P. Igić, and K. Kalna, Modelling and Optimization of GaN Capped HEMTs, Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2014), 153-156, ed. by J. Breza and D. Donoval (Smolenice Castle, Slovakia, 20-22 October 2014).

  163. Olga Kryvchenkova, K. Kalna, and R. Cobley, The Current Crowding Effect in ZnO Nanowires with an End-Bonded Metal Contact, Proc. 5th Int. Conf. on Advanced Nanomaterials (ANM 2014) (Aveiro, Portugal, 2-4 July 2014), Materials Today: Proceedings (2014).

  164. Natalia Seoane, G. Indalecio, A. J. García-Loureiro, M. Aldegunde, and K. Kalna, WN and TiN metal gate workfunction variability in InGaAs FinFETs, Proc. UK Semiconductors 2014, p. 102 (Sheffield, UK, 9-10 July 2014).

  165. D. Nagy, M. A. Elmessary, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Perić, A. J. García-Loureiro, A. Martinez, and K. Kalna, 3D Finite Element Monte Carlo Study of Scaled Triangular SOI FinFETs using 2D Schrödinger Quantum Corrections, Proc. UK Semiconductors 2014, p. 99 (Sheffield, UK, 9-10 July 2014).

  166. S. Faramehr, A. Al-Khalidi, A. Khalid, E. Wasige, P. Igić, and K. Kalna, Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT, Proc. UK Semiconductors 2014, p. 175 (Sheffield, UK, 9-10 July 2014).

  167. S. Faramehr, K. Kalna, and P. Igić, Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs, Proc. 29th International Conference on Microelectronics (Belgrade, Serbia, 12-14 May 2014).

  168. P. Igić, S. Faramehr, and K. Kalna, GaN Technology for Power RF applications: Present Reliability Roadblocks and Future Trends, Proc. 29th International Conference on Microelectronics (Belgrade, Serbia, 12-14 May 2014) [invited keynote].

  169. D. Nagy, M. A. Elmessary, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Perić A. J. García-Loureiro, and K. Kalna, 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulations of Nanoscale FinFETs, Proc. the 17th International Workshop on Computational Electronics (IWCE-17), pp. 53-54 (Paris, France, 3-6 June 2014).

  170. M. Aldegunde, S. P. Hepplestone, P. V. Sushko, and K. Kalna, Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs, Proc. the 17th International Workshop on Computational Electronics (IWCE-17), pp. 91-92 (Paris, France, 3-6 June 2014).

  171. M. Aldegunde, S. P. Hepplestone, P. V. Sushko, and K. Kalna, Multi-Scale Simulations of Transport Through an Mo/n+-GaAs Contact, Proc. Theory, Modelling and Computational Methods for Semiconductors (TMCS IV) (Salford, UK, 22-24 Jan 2014).
    		2013
  172. S. M. Sultan, N. J. Ditshego, R. Gunn, K. Kalna, P. Ashburn, and H. M. H. Chong, Top-down ZnO nanowire field effect transistors for logic circuit applications, in E-MRS Fall Meeting 2013 (Warsaw, Sept. 2013), 16-20.

  173. S. Faramehr, P. Igić, and K. Kalna, Modelling of current instability issues in GaN HEMT, Proc. UK Semiconductors 2013 (Sheffield, UK, 3-4 July 2013), 154.

  174. M. A. Elmessary, D. Nagy, M. Aldegunde, A. J. García-Loureiro, and K. Kalna, 3D finite element quantum corrected Monte Carlo simulations of nanoscale Si SOI FinFETs, Proc. UK Semiconductors 2013 (Sheffield, UK, 3-4 July 2013), 81.

  175. M. Aldegunde, S. Hepplestone, P. Sushko, and K. Kalna, Multi-scale simulation of a Mo/n+-GaAs Ohmic contact, Proc. UK Semiconductors 2013 (Sheffield, UK, 3-4 July 2013), 45.

  176. M. Aldegunde, S. Hepplestone, P. Sushko, and K. Kalna, Multi-scale simulation of transport through a Mo/n+-GaAs Schottky contact, Proc. 2013 MRS Spring Meeting, Symp. T (T2.08 @ 2 April 4:15PM), (San Francisco, 1-5 April 2013).

  177. G. Indalecio, A. J. García-Loureiro, M. Aldegunde, and K. Kalna, Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG, Proc. 2013 Spanish Conference on Electron Devices (CDE), ed. by H. García and H. Castán (Valladolild, Spain, 12-14 February 2013), 95-98.
    		2012
  178. S. Faramehr, P. Igić, and K. Kalna, TCAD modelling of current dispersion in a 0.25 μm gate length GaN HEMT, Proc. 9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2012), ed. by Š. Haščík and J. Osvald (Smolenice Castle, Slovakia, 11-15 November 2012), 11-14.

  179. A. Martinez, M. Aldegunde, K. Kalna, and J. R. Barker, Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors, Proc. the 15th International Workshop on Computational Electronics (IWCE-15) (University of Wisconsin, Madison, USA, 22-25 May, 2012), 103.

  180. M. A. Pourghaderi and K. Kalna, A rigorous calculation of tunnelling current for the quantum-well Schottky structure, Proc. Theory, Modelling and Computational Methods for Semiconductors Conference (TMCS III), ed. by M. Califano (Leeds, U.K., 18-20 January 2012), 29.
    		2011
  181. A. Martinez, K. Kalna, and M. Aldegunde, Impact of Phonon Scattering in a Si GAA Nanowire FET with a single donor in the channel, in IEEE Nano 2011, 11th International Conference on Nanotechnology (15-19 August 2011, Portland, U.S.A.), 551-554.

  182. A. Islam and K. Kalna, Lateral Scaling of Si and In0.3Ga0.7As NanoMOSFETs, Proc. UK Semiconductors 2011 (Sheffield, UK, 7-8 July 2011).

  183. M. Aldegunde, A. J. García–Loureiro, N. Seoane, R. Valin, and K. Kalna, 3D Monte Carlo simulations of a 25 nm gate length SOI FinFET using unstructured tetrahedral grids, Proc. EUROSOI 2011 (Granada, Spain, 17-19 January 2011), 131-132.
    		2010
  184. A. Islam and K. Kalna, Monte Carlo Simulations of Channel Scaling to Ultimate Limit in Si and In0.3Ga0.7As Bulk MOSFETs, Proc. 8th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2010), ed. by D. Donoval (Smolenice Castle, Slovakia, 25-27 October 2010), 321-324.

  185. B. Benbakhti, K. Kalna, K. Chan, E. Towie, G. Hellings, G. Eneman, K. De Meyer, M. Meuris, and A. Asenov, Design and Analysis of a New In0.53Ga0.47As Implant-Free Quantum-Well Device Structure, Proc. European Material Research Conference 2010 (E-MRS 2010), 2.2, Symposium H (Strasbourg, France, 2010).

  186. B. Benbakhti, E. Towie, K. Kalna, G. Hellings, G. Eneman, K. De Meyer, M. Meuris, and A. Asenov, Monte Carlo analysis of In0.53Ga0.47As implant free quantum-well device performance, Proc. 2010 Silicon Nanoelectronics Workshop, ed. by S. N. Goodnick (Hawaii, U.S.A., 13-14 June, 2010), 17-18.

  187. A. J. García-Loureiro, M. Aldegunde, N. Seoane, K. Kalna, and A. Asenov, Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET, Proc. Ultimate Integration on Silicon (ULIS) 2010, ed. by S. Roy (Glasgow, UK, 17-19 March 2010), 77-80.
    		2009
  188. A. Martinez, K. Kalna, and A. Asenov, Impurity Potential Induced Resonances in Doped Si Nanowire: A NEGF Approach, in IEEE Nano 2009, 9th International Conference on Nanotechnology (26-30 July 2009, Genoa, Italy), 551-554.

  189. B. Benbakhti, J. S. Ayubi-Moak, K. Kalna, and A. Asenov, Impact of Interface Optical Phonons and Interface State Trap Density on Surface Channel and Implant Free III-V MOSFETs based on In0.3Ga0.7As channel , Proc. 2009 Silicon Nanoelectronics Workshop, ed. by Y. Ono and H. Mizuta (Kyoto, Japan, 13-14 June, 2009), 147-148.

  190. D. Balaz, K. Kalna, M. Kuball, D. G. Hayes, M. J. Uren, and A. Asenov, Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT, Proc. 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009), ed. by S. Ringel and C. Bolognesi (Malaga, Spain, 17-29 May, 2009), 14-17.

  191. M. Aldegunde, A. J. García-Loureiro, Natalia Seoane, A. Asenov, and K. Kalna, Mesh Generation for the “Atomistic” Simulation of Variability in InGaAs Implant-Free NanoMOSFETs, Proc. the 2009 Spanish Conference on Electron Devices (CDE 2009), ed. by A. G. Loureiro, N. S. Iglesias, M. A. Aldegunde Rodríguez, E. C. Figueroa (Santiago de Compostela, Spain, 11-13 February, 2009), 211-214.

  192. J. S. Ayubi-Moak, K. Kalna, and A. Asenov, High-Performance In0.75Ga0.25As Implant-Free n-type MOSFETs for Low Power Applications, Proc. the 2009 Spanish Conference on Electron Devices (CDE 2009), ed. by A. G. Loureiro, N. S. Iglesias, M. A. Aldegunde Rodríguez, E. C. Figueroa (Santiago de Compostela, Spain, 11-13 February, 2009), 92-95.
    		193. 2008
  193. K. Kalna, A. Asenov, J. S. Ayubi-Moak, A. J. Craven, R. Droopad, R. Hill, M. C. Holland, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, M. Passlack, G. Paterson, C. R. Stanley, S. Thoms, H. Zhou, and I. G. Thayne, III-V MOSFETs for Digital Applications with Silicon Co-Integration, Proc. 7th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2008), ed. by J. Osvald and S. Hascik (Smolenice Castle, Slovakia, 12-16 October 2008), 39-46 [Invited].

  194. M. Aldegunde, A. J. García-Loureiro, and K. Kalna, Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs, Lect. Notes Comput. Sc. 4818, ed. by I. Lirkov, S. Margenov, and J. Wasniewski (6th International Conference, LSSC 2007, Sozopol, Bulgaria, June 5-9, 2007) pp. 115-122 (Springer, Berlin, 2008).
    		2007
  195. M. Passlack, P. Zurcher, K. Rajaopalan, R. Droopad, J. Abrokwah, M. Tutt, J-B Park, E. Johnson, O. Hartin, A. Zlotnicka, P. Fejes, R. Hill, D. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, A. Asenov, K. Kalna, and I. Thayne, High Mobility III-V MOSFETs for RF and Digital Applications, IEDM Tech. Dig. 2007, (IEEE, Piscataway, 2007, Washington, 10-12 December), 621-624 [Invited].

  196. M. Aldegunde, A. J. García-Loureiro, P. V. Sushko, A. Shluger, K. Kalna, and A. Asenov, 'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices, Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007, Vienna, Austria, 25-27 September 2007), 97-100.

  197. I. G. Thayne, A. Asenov, A. J. Craven, M. C. Holland, R. Hill, K. Kalna, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, G. Paterson, J. Scott, C. R. Stanley, S. Thoms, J. Wilson, H. Zhou, R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, and M. Passlack, III-V MOSFETs for Silicon Co-Integration, Proc. Int. Symp. Advanced Silicon-based Nano-devices (Tokyo, Japan, Nov. 2007) [Invited].

  198. K. Kalna, R. Droopad, M. Passlack, and A. Asenov, Monte Carlo simulations of InGaAs nano-MOSFETs, 11.4 on 22 June (INFOS 2007, Athens, Greece, 20-23 June 2007).

  199. A. Asenov, K. Kalna, I. Thayne, and R. J. W. Hill, Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications, 20.0 on 23 June (INFOS 2007, Athens, Greece, 20-23 June 2007) [Invited].

  200. A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker, and A. Asenov, Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study, Proc. 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 21-22.

  201. I. G. Thayne, A. Asenov, R. J. W. Hill, M. C. Holland, K. Kalna, X. Li, D. Macintyre, D. A. J. Moran, C. R. Stanley, S. Thoms, H. Zhou, J. Abrokwar, R. Droopad, K. Rajagopalan, P. Zucher, and M. Passlack, High performance enhancement mode III-V MOSFETs for Silicon co-integration, Proc. 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 1-2 [Invited].

  202. R. Hill, A. Asenov, A. J. Craven, M. C. Holland, K. Kalna, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, G. Paterson, J. Scott, C. R. Stanley, S. Thoms, J. Wilson, H. Zhou, and I. G. Thayne, "Recent Progress in III-V MOSFETs", Proc. Int. Symp. Nanostructures: Physics and Technology (Novosibirsk [Новoсибирcк], June 2007) [Invited].

  203. D. A. J. Moran, A. Asenov, A. J. Craven, M. C. Holland, R. Hill, K. Kalna, X. Li, A. R. Long, P. Longo, D. MacIntyre, R. Hill, G. Paterson, J. Scott, C. R. Stanley, S. Thoms, J. Wilson, H. Zhou, and I. G. Thayne, "High performance enhancement mode III-V MOSFETs", IBM Workshop on Advanced Oxides (Zürich, Switzerland, June 2007) [Invited].

  204. I. G. Thayne, A. Asenov, A. J. Craven, M. C. Holland, R. Hill, K. Kalna, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, G. Paterson, J. Scott, C. R. Stanley, S. Thoms, J. Wilson, and H. Zhou, Recent Progress in III-V MOSFETs, Proc. UK Condensed Matter and Material Physics Conference (Leicester, UK, April, 2007) [Invited].

  205. A. J. García-Loureiro, K. Kalna, and A. Asenov, Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator, Proc. 2007 Spanish Conference on Electron Devices (IEEE, Madrid, Spain, 31 Jan-2 Feb 2007), 60-63.
    		2006
  206. K. Kalna and A. Asenov, Implant free III-V MOSFETs for high performance, low power CMOS applications, 12th Advanced Heterostructure Workshop (Hawaii, USA, 3-8 December 2006) [Invited].

  207. I. G. Thayne, D. A. J.Moran, K. Kalna, A. Asenov, K. Elgaid, R. Hill, J. Wilson, A. R. Long, X. Li, H. Zhou, D. S. MacIntyre, S. Thoms, M. C. Holland, and C. R. Stanley, III-V MOSFETs for digital applications - An overview, Proc. UK Compound Semiconductor 2006, ed. by K. M. Groom (Sheffield, U.K.) 38.

  208. K. Kalna, R. Hill, J. A. Wilson, D. A. J. Moran, A. R. Long, A. Asenov, and I. G. Thayne, Monte Carlo simulations of sub-30nm high indium implant free III-V MOSFETs for low power digital applications, Proc. UK Compound Semiconductor 2006, ed. by K. M. Groom (Sheffield, U.K.) 39.

  209. K. Kalna, Q. Wang, M. Passlack, and A. Asenov, MC simulations of δ-doping placement in sub-100 nm implant free InGaAs MOSFETs, Proc. E-MRS 2006 Spring Meeting, ed. by M. M. Frank (Nice, France, 2006) B-14.

  210. K. Kalna, J. A. Wilson, D. A. J. Moran, R. Hill, A. R. Long, R. Droopad, M. Passlack, I. G. Thayne, and A. Asenov, MC simulations of high performance In0.3Ga0.7As nano-MOSFETs for low-power CMOS applications, Proc. 2006 Silicon Nanoelectronics Workshop, ed. by W. Porod and A. Asenov (Honolulu, Hawaii, U.S.A.) 13-14.
    		2005
  211. M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, L. Raymond, J.L. Autran, M. Lannoo, and A. Asenov, Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs, IEDM Tech. Dig. 526-529 (Washington), 2005. [ Full paper in PDF 263 kB] [ Cited in]

  212. A. J. García-Loureiro, K. Kalna, and A. Asenov, Intrinsic fluctuations induced by a high-κ gate dielectric in sub-100 nm Si MOSFETs, in AIP Conference Proc. 18-th ICNF ed. by T. Gonzales, J. Mateos, and D. Pardo (Salamanca, Spain, 2005) 239-242.

  213. K. Kalna, L. Yang, and A. Asenov, Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications, Proc. ESSDERC 2005, ed. by G. Ghibaudo, T. Skotnicki, S. Cristoloveanu and M. Brillouët, (Grenoble, France, 2005) 169-172.

  214. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, A high-performance parallel device simulator for high electron mobility transistors, in "Parallel Computing: Current and Future Issues of High End Computing", Proc. Int. Conf. ParCo 2005, ed. by G. R. Joubert, W. E. Nagel, F. J. Peters, O. Plata, P. Tirado, and E. L. Zapata, NIS Ser. 33 (Malaga, Spain, 2005) 407-414.

  215. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Discrete doping fluctuations in the delta layer of a 50 nm InP HEMT , Proc. Workshop on Modeling and Simulation of Electron Devices, ed. by A. Campera, G. Fiori, G. Iannaccone, and M. Macucci, 4-5 July (Pisa, Italy, 2005) 78-79.

  216. M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, J. L. Autran, M. Lannoo, and A. Asenov, Simulation study of performance limits for Si, Ge, and GaAs ballistic nanowire MOSFETs, Proc. 2005 Silicon Nanoelectronics Workshop, ed. by M. Tabe, 12-13 June (Rihga Royal Hotel Kyoto, Kyoto, Japan, 2005) 8-9.
    		2004
  217. A. Asenov and K. Kalna: Scaling the HEMT to sub-100nm dimensions: a simulation study, Proc. Asian Pacific Microwave Conference APMC'04 (New Delhi, India, 2004) [Invited].
    		2003
  218. A. J. García-Loureiro, K. Kalna, A. Asenov, R. C. W. Wilkins, and J. M. Lopez-Gonzalez, Statistic 3D Simulations of intrinsic fluctuations in nanoscaled PHEMTs, Proc. MSED (14-th Workshop on Modelling and Simulation of Electron Devices), ed. by F. Martín et al (Barcelona, Spain, 2003) 45-48.

  219. D. A. J. Moran, K. Kalna, E. Boyd, F. McEwan, H. Mclelland, L. L. Zhuang, C. Stanley, A. Asenov, and I. Thayne, Self-aligned 0.12 μm T-gate In.53Ga.47As/In.52Ga.48As technology using a non-annealed ohmic contact strategy, Proc. ESSDERC 2003, ed. by J. Franca and P. Freitas (Chipidea, Estoril, Portugal, 2003) 315-318. [ Full paper in PDF 143 kB]
    		2002
  220. K. Kalna and A. Asenov, Breakdown mechanisms limiting the operation of double doped PHEMTs scaled into sub-100 nm dimensions, Proc. 4th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2002), ed. by J. Breza, D. Donoval (Smolenice Castle, Slovakia, 2002), 141-144.

  221. K. Kalna and A. Asenov, Tunnelling and impact ionization in scaled double doped PHEMTs Proc. ESSDERC 2002, ed. by G. Baccarani, E. Gnani and M. Rudan (University of Bologa, Firenze, Italy, 2002) 303-306. [ Full paper in PDF 263 kB]

  222. K. Kalna and A. Asenov, Balllistic transport in decanano PHEMTs, Proc. 13th Workshop on Physical Simulation of Semiconductor Devices, ed. by. R. G. Johnson, R. W. Kelsall, W. Batty, R. E. Miles (Ilkley, UK, 2002), 1-5.
    		2001
  223. K. Kalna and A. Asenov, Multiple delta doping in aggressively scaled PHEMTs, Proc. ESSDERC 2001, ed. by H. Ryssel, G. Wachutka and H. Grünbacher (Frontier Group, Nürnberg, Germany, 2001), 380-384. [ Full paper in PDF 156 kB]
    		2000
  224. K. Kalna, A. Asenov, K. Elgaid and I. Thayne, Performance of aggressively scaled pseudomorphic HEMTs: A Monte Carlo study Proc. 3rd International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2000), ed. by J. Osvald, S. Hascik, J. Kuzmik, and J. Breza (Smolenice Castle, Slovakia, 2000), 55-58. [ Full paper in PDF 58 kB]

  225. K. Kalna, S. Roy, A. Asenov, K. Elgaid and I. Thayne, RF analysis of aggressively scaled pHEMTs, Proc. ESSDERC 2000, ed. by W. A. Lane, G. M. Crean, F. A. McCabe, H. Grünbacher (Frontier Group, Cork, Ireland 2000), 156-159. [ Full paper in PDF150 kB]
    		1997
  226. K. Kalna, Capture time in quantum well laser structure, lecture at Miniworkshop On Quantum Wells, Dots, Wires and Self-Organizing Nanostructures, Research Workshop on Condensed Matter Physics (ICTP, Trieste, Italy, 30 June - 22 August 1997) SMR.998d-5. [ Full paper in PDF405 kB]
    		1996
  227. K. Kalna and M. Moško, Carrier capture due to carrier-carrier interaction in quantum wells, in: Heterostructure Epitaxy and Devices, Ed. by J. Novak and A. Schlachetzki (NATO ASI Series, Kluwer Academic Publishers, Dordrecht 1996), 79-82. [Abstract]
    		1995
  228. K. Kalna, M. Moško, and F. M. Peeters, Electron-electron scattering induced capture in GaAs quantum wells, in Proc. 9-UFPS Symposium (Vilnius, Lithuanian J. Phys. 35, 1995), 435-439. [Abstract]

    Posters (Presenting person is underlined):

    		2025
  229. K. Ahmeda, B. Ubochi, B. Benbakhti, M. Elksne, W. Abushiba, E. Wasige, and K. Kalna, Investigation of Defects Generation on Self-Heating of GaN HEMTs, Proc. Int. GaN4AP Workshop: GaN for Advanced Power Applications (ID30), 20–21 February 2025, Catania (Italy).
    		2024
  230. M. G. K. Alabdullah, Natalia Seoane, A. J. García-Loureiro, and K. Kalna, Ultra Scaled Nanosheet & Nanowire FETs Performance Evaluation with 3D Monte Carlo Simulations for Future Technology, Proc. Int. Semiconductor Conf. - CAS 2024 (Sinaia, Romania, 9-11 October, 2024), pp. 333-336.

  231. A. King, L. Li, and K. Kalna, Density Fuctional Theory Calculations of the Bandstructure for Cubic Boron Arsenide, Proc. UK Semiconductors 2024 (Sheffield, UK, 8-9 July 2024), p. 156.
    		2023
  232. J. Zeng, B. D. Rowlinson, M. Ebert, K. Kalna, C. Patzig, L. Berthold and H. M. H. Chong, Investigation on the effect of sharp corners of AZO gate and Al2O3 insulator in ZnO Thin Film Transistors, Proc. 49th Int. Conf. on Micro and Nano Engineering (MNE), (Berlin, Germany, 25-28 Sept. 2023).

  233. K. Kalna and D. Chaussende, Monte Carlo Simulations of Electrons in Al4SiC4 Ternary Carbide, Proc. International Workshop on Computational Nanotechnology (IWCN 2023) (Barcelona, Spain, 12-16 June 2023), pp. 182-183.
    		2020
  234. E. Pascual, J. M. Iglesias, M. J. Martín, R. Rengel, and K. Kalna, Monte Carlo Simulations for 2D Materials: Parallelization Strategy and Degeneracy in MoS2, Graphene Online & 2DM (7 July 2020), ePoster/abstract.

  235. E. Pascual, J. M. Iglesias, M. J. Martín, R. Rengel, and K. Kalna, Exploration of a 2D Material Monte Carlo Simulator: Parallelization Strategy and Noise Characterization of MoS2, Proc. the ImagineNano 2020 (Bilbao, Spain, 29 Sept-1 Oct 2020), Symposium: Graphin 2020.
    		2018
  236. S. Forster, J. Cañas, F. Lloret, M. Gutiérrez, D. Araujo, K. Kalna, and D. Chaussende, Experimental Extraction of the Bandgap for Al4SiC4, Proc. UK Semiconductors 2018 (Sheffield, UK, 4-5 July 2018), p. 37.

  237. K. Ahmeda, B. Ubochi, M. H. Alqaysi, A. Al‐Khalidi, E. Wasige, and K. Kalna, The role of positive interface charge and the effect of GaN for enhancement mode GaN HEMT operation, Proc. UK Semiconductors 2018 (Sheffield, UK, 4-5 July 2018), p. 39.
    		2017
  238. B. Thorpe, K. Kalna, F. Langbein and S. Schirmer, Spin recovery in the 25 nm gate length InGaAs field effect transistor, Proc. Int. Workshop on Computational Nanotechnology (IWCN 2017) (Windermere, U.K., 6-9 June 2017), p. 166.

  239. D. Nagy, A. J. García-Loureiro, K. Kalna, and Natalia Seoane, Characterisation of a tunnel field-effect transistor using 2D TCAD simulations, Proc. the Int. Workshop on Computational Nanotechnology (IWCN 2017) (Windermere, U.K., 6-9 June 2017), p. 152.

  240. S. Forster, B. Ubochi, and K. Kalna, Monte Carlo Simulations of Electron Transport in Bulk GaN, Proc. Int. Workshop on Computational Nanotechnology (IWCN 2017) (Windermere, U.K., 6-9 June 2017), p. 115.

  241. D. Nagy, A. J. García-Loureiro, K. Kalna and Natalia Seoane, Simulations of a Planar Silicon Tunnel Field-Effect Transistor, Proc. NanoSpain Conference 2017 (7-10 March 2017, San Sebastian, Spain), p.139.
    		2016
  242. M. A. Elmessary, D. Nagy , M. Aldegunde , A. J. García-Loureiro, and K. Kalna, 3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs, Proc. 21st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2016), 6-8 Sept. 2016, Nuremberg, Germany, pp. 229-232.

  243. N. Seoane, G. Indalecio, A. J. García-Loureiro, and K. Kalna, Impact of the cross-section shape on the metal grain work-function variability of a 10.4 nm gate length In0.53Ga0.47As FinFET, Proc. 21st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2016), 6-8 Sept. 2016, Nuremberg, Germany, pp. 241-244.

  244. A. Mohamed, H. M. H. Chong, and K. Kalna, Effective and Channel Mobility Extraction in ZnO Nanowire Transistors, Proc. UK Semiconductors 2016 (Sheffield, UK, 6-7 July 2016), p. 91.

  245. K. Ahmeda, S. Faramehr, P. Igić, K. Kalna, S. Duffy, A. Soltani, and B. Benbakhti, Electrical Stress Induced Surface Polarisation in AlGaN/GaN TLM Structures, Proc. UK Semiconductors 2016 (Sheffield, UK, 6-7 July 2016), p. 197.
    		2015
  246. D. Nagy, M. A. Elmessary, M. Aldegunde, J. Lindberg, A. J. García–Loureiro and K. Kalna, Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schrödinger Equation for Simulations of sub-16nm FinFETs, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2015) Washington, USA, 9 - 11 September 2015), pp. 377-380.

  247. D. Nagy, M. Aldegunde, M. A. Elmessary, and K. Kalna, The effect of interface roughness scattering on Si SOI FinFET with Ando’s and extended Prang and Nee model, Proc. 19th Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) (Salamanca, Spain, 29 June - 2 July 2015), p. 154.

  248. A. Mohamed, D. Nagy, M. A. Elmessary, and K. Kalna, An Approach Model To Study Ultra-low Resistance Source/Drain Contacts Scheme for III–V NMOS, Proc. UK Semiconductors 2015 (Sheffield, UK, 1-2 July 2015), p. 128.

  249. K. Ahmeda, S. Faramehr, A. Al-Khalidi, E. Wasige, P. Igić, and K. Kalna, Impact of GaN Cap Thickness in 1μm Gate Length GaN/AlGaN/AlN/GaN HEMT, Proc. UK Semiconductors 2015 (Sheffield, UK, 1-2 July 2015), p. 190.
    		2014
  250. N. Seoane, M. Aldegunde, K. Kalna, and A. J. García–Loureiro, Statistical current variation due to metal grains in a 10.4 nm gate length InGaAs FinFET, Proc. 2014 Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2014) (Yokohama, Japan, 9-11 September 2014).

  251. M. Aldegunde, and K. Kalna, Self Forces in 3D Finite Element Monte Carlo Simulations of a 10.7 nm Gate Length SOI FinFET, Proc. 2014 Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD 2014) (Yokohama, Japan, 9-11 September 2014).

  252. Olga Kryvchenkova, K. Kalna, and R. Cobley, Modelling Current Crowding Effect in the ZnO Nanowires, Proc. UK Semiconductors 2013 (Sheffield, UK, 9-10 July 2014), p. 63.

  253. N. Seoane, G. Indalecio, E. Comesaña, M. Aldegunde, A. J. García–Loureiro, and K. Kalna, WN and TiN metal gate workfunction variability in a 10.4 nm gate length InGaAs FinFET, Proc. 17th Int. Workshop on Computational Electronics (IWCE-17) (Paris, France, 3-6 June 2014), pp. 239-240.

  254. A. Abdikarimov, G. Indalecio, E. Comesaña, N. Seoane, K. Kalna, A. J. García–Loureiro, A. E. Atamuratov, Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET, Proc. 17th Int. Workshop on Computational Electronics (IWCE-17) (Paris, France, 3-6 June 2014), pp. 247-248.

  255. M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. G. Dettmer, D. Perić, A. J. García–Loureiro, A. Martinez, and K. Kalna, 3D Monte Carlo Study of Scaled SOI FinFETs Using 2D Schrö dinger Quantum Corrections, Proc. 15th Int. Conf. on Ultimate Integration on Silicon (ULIS 2014) (Stockholm, Sweden, 7-9 April 2014), P97 (4 pp).

  256. G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, and A. J. García–Loureiro, Scaling of Metal Gate Workfunction Variability in nanometer SOI-FinFETs, Proc. 15th Int. Conf. on Ultimate Integration on Silicon (ULIS 2014) (Stockholm, Sweden, 7-9 April 2014), P105 (4 pp).
    		2013
  257. Olga Kryvchenkova, K. Kalna, and R. Cobley, Modelling scanning probe interactions in a finite element device simulator, Proc. UK Semiconductors 2013 (Sheffield, UK, 3-4 July 2013), p. 50.
    		2012
  258. S. Faramehr, K. Kalna and P. Igić, Trapping Effects in the 0.25μm Gate Length Al0.28Ga0.72N/GaN HEMT, Proc. UK Semiconductors 2012 (Sheffield, UK, 4-5 July 2012), 184.

  259. K. Kalna and J. S. Ayubi-Moak, Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs, Proc. the 15th International Workshop on Computational Electronics (IWCE-15) (University of Wisconsin, Madison, USA, 22-25 May, 2012), 215.
    		2011
  260. M. Aldegunde, A. J. Garcia-Loureiro, A. Martinez, and K. Kalna, 3D Finite Element Multi-Model Simulations of 25 nm SOI FinFETs, Proc. 2011 Silicon Nanoelectronics Workshop, ed. by Y. Ono (Kyoto, Japan, 12-13 June, 2011), 37-38.

  261. M. Aldegunde, N. Seoane, A. J. García–Loureiro, and K. Kalna, Efficient Monte Carlo simulations of n-MOSFETs on unstructured meshes, Proc. the 2011 Spanish Conference on Electron Devices (CDE) 2011, (Palma de Mallorca, Spain, 8-13 February, 2011), 164-167.

  262. Natalia Seoane, M. Aldegunde, R. Valin, A. J. García–Loureiro, and K. Kalna, Drift-diffusion simulations of a 20 nm In0.53Ga0.47As Implant Free Quantum Well MOSFET, Proc. the 2011 Spanish Conference on Electron Devices (CDE) 2011, (Palma de Mallorca, Spain, 8-13 February, 2011), 164-167.
    		2010
  263. M. Aldegunde, A. Loureiro, B. Benbakhti, and K. Kalna, Advancing Monte Carlo Simulations of Electron Transport in Bulk GaN, Proc. UK Semiconductors 2010 (Sheffield, UK, 7-8 July 2010), E-P-5.

  264. A. Islam and K. Kalna, Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs: A Monte Carlo Study, Proc. 2010 Silicon Nanoelectronics Workshop, ed. by S. N. Goodnick (Hawaii, U.S.A., 13-14 June, 2010), 119-120.

  265. Z. Soban, J. Voves, and K. Kalna, Hole effective mass analysis in the strained p-channel InSb QWFET, Proc. European Material Research Conference (E-MRS) 2010, (Strasbourg, France, 2010).

  266. B. Benbakhti, K. Kalna, X. Wang, B. Cheng and A. Asenov, Impact of Raised Source/Drain in the In0.53Ga0.47As Channel Implant-Free Quantum-Well Transistor, Proc. Ultimate Integration on Silicon (ULIS) 2010, ed. by S. Roy (Glasgow, UK, 17-19 March 2010), 129-132.

  267. A. Islam and K. Kalna, Electron velocity decline in Si nanoscale MOSFETs with the shortening of gate length, Proc. Theory, Modelling and Computational Methods for Semiconductors Conference (TMCS II), ed. by M. Probert (York, U.K., 13-15 January 2010), 18.
    		2009
  268. Natalia Seoane, A. J. García–Loureiro, M. Aldegunde, K. Kalna and A. Asenov, Efficient 3D Drift–Diffusion simulations of Implant Free Heterostructure Devices, Proc. the 2009 Spanish Conference on Electron Devices (CDE 2009), ed. by A. G. Loureiro, N. S. Iglesias, M. A. Aldegunde Rodríguez, E. C. Figueroa (Santiago de Compostela, Spain, 11-13 February, 2009), 164-167.

  269. A. J. García–Loureiro, M. Aldegunde, Natalia Seoane, K. Kalna and A. Asenov, 3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETs, Proc. the 2009 Spanish Conference on Electron Devices (CDE 2009), ed. by A. G. Loureiro, N. S. Iglesias, M. A. Aldegunde Rodríguez, E. C. Figueroa (Santiago de Compostela, Spain, 11-13 February, 2009), 200-203.

  270. M. Aldegunde, A. García–Loureiro, Natalia Seoane, A. Martinez, and K. Kalna, 3D Parallel Finite Element Monte Carlo Simulator With Quantum Corrections Using Density Gradient Approach, Proc. the 2009 Spanish Conference on Electron Devices (CDE 2009), ed. by A. G. Loureiro, N. S. Iglesias, M. A. Aldegunde Rodríguez, E. C. Figueroa (Santiago de Compostela, Spain, 11-13 February, 2009), 207-210.
    		2008
  271. M. Aldegunde, A. J. García-Loureiro, A. Martinez, and K. Kalna, 3D Monte Carlo Simulation of Tri-Gate MOSFETs Using Tetrahedral Finite Elements, Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), ed. by K. Taniguchi and K. Ishikawa (Hakone-Yumoto, Japan, 9-11 September 2008), 153-156.
    		2007
  272. K. Kalna, A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, and A. Asenov, NEGF Simulation of the effect of strain on scaled double gate nanoMOSFETs Proc. 12th Int. Workshop on Computational Electronics (IWCE-12) (University of Massachusetts, Amherst, USA, 8-10 October, 2007) QT-10.

  273. M. Aldegunde, A. J. García-Lourerio, A. Martinez, K. Kalna, Parallel 3D Monte Carlo simulation of MOSFETs using tetrahedral finite elements Proc. the 12th Int. Workshop on Computational Electronics (IWCE-12) (University of Massachusetts, Amherst, USA, 8-10 October, 2007) MC-3.

  274. N. Seoane, K. Kalna, A. García-Loureiro, and A. Asenov, Threshold voltage variability in nanoscale InGaAs implant-free MOSFETs Proc. the 12th International Workshop on Computational Electronics (IWCE-12) (University of Massachusetts, Amherst, USA, 8-10 October, 2007) TCAD-21.

  275. K. Kalna, R. Droopad, M. Passlack, and A. Asenov, Monte Carlo Simulations of implant free InGaAs nanoMOSFETs With quantum corrections, Proc. the 15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 62.

  276. A. Martinez, K. Kalna, A. Svizhenko, J. R. Barker and A. Asenov, Impact of strain on the ultimate scaling of double gate MOSFETs using a non-equilibrium Green functions approach , Proc. 15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 128.

  277. Natalia Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov, Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT, Proc. 2007 Spanish Conference on Electron Devices (IEEE, Madrid, Spain, 31 Jan-2 Feb, 2007), 92-95.

  278. M. Aldegunde, A. J. García-Loureiro, K. Kalna, A. Asenov, Mesh Generation for "atomistic" simulation of nanometre scale MOSFETs , Proc. 2007 Spanish Conference on Electron Devices (IEEE, Madrid, Spain, 31 Jan-2 Feb, 2007), 100-103.
    		2005
  279. N. Seoane, A. J. García-Loureiro, K. Kalna, and A. Asenov, Indium content fluctuations in the channel of a 120 nm PHEMT, Proc. 7th Int. Conf. on New Phenomena in Mesoscopic Systems/5th Int. Conf. on Surfaces and Interfaces in Mesoscopic Devices, ed. by unknowns (Maui, Hawaii, 2005), 135-136.

  280. K. Kalna, A. Asenov and M. Passlack, Monte Carlo simulation of implant free InGaAs MOSFETs, Proc. 7th Int. Conf. on New Phenomena in Mesoscopic Systems/5th Int. Conf. on Surfaces and Interfaces in Mesoscopic Devices, ed. by unknowns (Maui, Hawaii, 2005), 85-86.

  281. K. Kalna, L. Yang and A. Asenov, Fermi-Dirac statistics in Monte Carlo simulations of InGaAs MOSFETs, Proc. 14th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 14) (Chicago, 24-29 July, 2005), P24.

  282. K. Kalna, K. Elgaid, I. Thayne and A. Asenov, Modelling of InP HEMTs with high Indium content channels, Proc. Indium Phosphide and Related Materials Conference, ed. by J. Marsh and I. Thayne (Glasgow 2005) 61-65.[ Full paper in PDF 160 kB] -DFirac
    		2004
  283. K. Kalna, L. Yang, J. Watling and A. Asenov, 80 nm InGaAs MOSFET compared to equivalent Si transistor, Proc. ULIS 2004 (5-th Int. Workshop on the Ultimate Integration of Silicon), ed. by K. De Mayer and N. Collaert (Leuven, Belgium 2004), 159-162.
    		2002
  284. K. Kalna, L. Yang, and A. Asenov, High performance III-V MOSFETs: a dream close to reality?, Proc. EDMO 2002, ed. by M. Missous (Manchester 2002), 243-248.

  285. K. Kalna and A. Asenov, Gate tunnelling and impact ionisation in sub 100 nm PHEMTs, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD) 2002, ed. by K. Taniguchi and S. Odanaka (Osaka, Japan 2002) 139-142. [ Full paper in PDF 274 kB]
    		2000
  286. K. Kalna, A. Asenov, K. Elgaid, and I. Thayne, Effect of impact ionization in scaled pHEMTs, Proc. EDMO 2000, ed. by I. Thayne (Glasgow 2000), 236-241. [ Full paper in PDF 207 kB]
    		1999
  287. K. Kalna, C. Y. L. Cheung, and K. A. Shore, Carrier transport effects on the dynamics of intersubband semiconductor lasers, IOP National Quantum Electronics conference (QE14) (Manchester, UK, September 1999).

  288. K. Kalna, C. Y. L. Cheung, I. Pierce, and K. A. Shore, Self-consistent analysis of carrier transport and capture dynamics in quantum cascade intersubband semiconductor lasers, Proc. Advanced Semiconductor Lasers & Applications Optical Society of America (ASLA99) (Santa Barbara, USA, July 1999), 84-86.

  289. K. Kalna, C. Y. L. Cheung, and K. A. Shore, Carrier transport and capture dynamics in quantum cascade semiconductor lasers, Proc. Semiconductor and Integrated Optoelectronics (SIOE99) (Aberdare Hall, Cardiff, April 1999).
    		1993
  290. M. Jergel, M. Brunel, E. Majková, K. Kalna, and Š. Luby, Structure and electrical properties of Tungsten/Silicon multilayers, Proc. 3-th seminar on Development of material science in research and education (Gabčíkovo, 1993), 44-47.

  291. K. Kalna, E. Majková, M. Jergel, and Š. Luby, Weak localization and superconductivity in amorphous W/Si multilayers, Proc. 7-th Czecho-Slovak Conference on Thin Films, ed. by V. Tvarožek and S. Németh (Liptovský Mikuláš, 1993), 280-283.

    Invited Talks:
  1. K. Kalna, Nanosheet Field-Effect Transistors For The Future Logic Architectures: Process Flow and Performance, Electrotechnical Institute, Slovak Academy of Sciences, 27 June 2024 @ 10:00am.

  2. K. Kalna, 3D Ensemble Monte Carlo Simulations of Gate-All-Around Nanosheet Field-Effect Transistors for Logic Applications, Department of Physics, University of Regensburg, 26 June 2024 @ 1:00pm.

  3. K. Kalna, Process Flow and Performance of Gate-All-Around Nanosheet Field-Effect Transistors For The Future Logic Applications, Institute of Solid State Electronics, TU Wien, 21 June 2024 @ 11:00am.

  4. K. Kalna, Monte Carlo Simulations of Carrier Mobility in Transition Metal Dichalcogenides: Impact of Temperature and Density, Institute of Solid State Electronics, TU Wien, 19 June 2024 @ 2:00pm.

  5. K. Kalna, The New Workhorse of CMOS: Process Flow and Performance of Nanosheet Field-Effect Transistors, Nano Group, School of Electronics and Computer Science, University of Southampton, 19 May 2023 @ 2:00pm.

  6. K. Kalna, Static and Dynamic Modelling of GaN HEMTs, NRN Workshop on RF/Power GaN HEMTs, Cardiff, Clayton Hotel, 18 March 2016 @ 12:00am.

  7. K. Kalna, Spin Monte Carlo transport simulations in nanoscale Si/InGaAs MOSFETs, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology (UK-Japan Si NANO2) Symposium, University of Southampton, 9-10 July 2015 @ 11:00am (9/7).

  8. K. Kalna, Transition of Schottky to Ohmic Regime in ZnO Nanowires with End-Bonded Metal Contacts, Nano Group, School of Electronics and Computer Science, University of Southampton, 18 June 2015 @ 2:00pm.

  9. K. Kalna, Multi-Gate Non-Planar III-V and Si Transistor Architectures for Sub-16nm Silicon Technology, 2014 Symposium on CMOS Emerging Technologies (MINATEC, Grenoble, France) 6-8 July 2014, Session O4, Semiconductor Devices @ 2:20pm.

  10. K. Kalna, Simulations of Si and III-V FinFETs for future digital applications, Institute of Electrotechnical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia, 21 May 2014 @ 10am.

  11. K. Kalna, 3D Finite Element Modelling Of Solid-State Devices With Atomic Resolution, Device and Process Modelling Workshop, The Welsh Intelligent Polymer Processing Consortium for Functional Applications (WIP2C), Aberystwyth University, Wales, UK, 17 December 2012.

  12. K. Kalna, 3D Finite Element Monte Carlo Simulations Of Non-Planar Transistor Architectures, Institute for Solid State Electronics, TU Wien, Austria, 16 November 2012 @ 11am.

  13. K. Kalna, Co-Integration of III-V/Ge MOSFETs with Silicon Technology for Future Digital Applications, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, University of Leeds, UK, 18 April 2012 @ 2pm.

  14. K. Kalna, Parallel 3D Finite Elements Simulations Of Semiconductor Devices, School of Electronic Engineering, Bangor University, 3 June 2011 @ 2:00pm.

  15. K. Kalna, InGaAs n-type MOSFETs Co-Integration For Future Silicon CMOS Technology, Department of Electronics and Computation, University of Santiago de Compostela, Spain, 17 June 2010 @ 12:30pm.

  16. K. Kalna, Parallel 3D finite elements device simulations using drift-diffusion and Monte Carlo techniques, School of Electrical and Electronic Engineering, University of Manchester, UK, 5 November 2009 @ 2pm.

  17. K. Kalna, III-V n-type MOSFETs Co-Integrated with Silicon sub-22nm Technology, Institute of Electrotechnical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia, 2 October 2009 @ 10am.

  18. K. Kalna, A. Asenov, J. S. Ayubi-Moak, A. J. Craven, R. Droopad, R. Hill, M. C. Holland, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, M. Passlack, G. Paterson, C. R. Stanley, S. Thoms, H. Zhou, and I. G. Thayne, III-V NanoMOSFETs Based on an InGaAs Channel for Co-Integration with Silicon, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, University of Leeds, UK, 2 March 2009 @ 2pm.

  19. K. Kalna, A. Asenov, J. S. Ayubi-Moak, B. Benbakhti, A. J. Craven, R. Droopad, R. Hill, M. C. Holland, X. Li, A. R. Long, P. Longo, D. MacIntyre, D. A. J. Moran, M. Passlack, G. Paterson, C. R. Stanley, S. Thoms, H. Zhou, and I. G. Thayne, III-V Semiconductor n-type Channel MOSFETs Integrated on Si Substrate for the 22 nm Technology and Beyond, Institute for Solid State Electronics, TU Wien, Austria, 16 October 2008 @ 4pm.

  20. K. Kalna, Co-Integration of InGaAs MOSFETs with Silicon for 22 nm Technology and Beyond, Faculty of Physics, University of Santiago de Compostela, Spain, 9 April 2008 @ 12pm.

  21. K. Kalna, Monte Carlo modelling of novel sub-100nm MOSFETs based on III-V semiconductors, Faculty of Physics, University of Santiago de Compostela, Spain, 11 May 2006 @ 1pm.

  22. K. Kalna, Monte Carlo device modelling of pseudomorphic HEMTs, Forschungszentrum Julich, IFF and ISG, Julich, Germany, 25 April 2001 @ 10:30am.

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